- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
Patent holdings for IPC class H01L 29/778
Total number of patents in this class: 6532
10-year publication summary
|
547
|
545
|
628
|
519
|
588
|
588
|
525
|
637
|
619
|
274
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
310 |
| Intel Corporation | 45621 |
309 |
| Toshiba Corporation | 12017 |
208 |
| Fujitsu Limited | 19265 |
200 |
| United Microelectronics Corp. | 3921 |
171 |
| Rohm Co., Ltd. | 5843 |
156 |
| Samsung Electronics Co., Ltd. | 131630 |
141 |
| Infineon Technologies Austria AG | 1954 |
131 |
| Innoscience (Suzhou) Technology Co., ltd. | 165 |
110 |
| Panasonic Intellectual Property Management Co., Ltd. | 27812 |
109 |
| Mitsubishi Electric Corporation | 43934 |
106 |
| Semiconductor Components Industries, L.L.C. | 5345 |
95 |
| Cree, Inc. | 1157 |
95 |
| Panasonic Corporation | 20786 |
93 |
| Enkris Semiconductor, Inc. | 310 |
88 |
| MACOM Technology Solutions Holdings, Inc. | 784 |
87 |
| Texas Instruments Incorporated | 19376 |
86 |
| Sumitomo Electric Industries, Ltd. | 14131 |
83 |
| Innoscience (Zhuhai) Technology Co., Ltd. | 134 |
79 |
| Infineon Technologies Americas Corp. | 768 |
77 |
| Other owners | 3798 |